Burlington, MA, United States of America

Walter Fabian


Average Co-Inventor Count = 1.3

ph-index = 2

Forward Citations = 56(Granted Patents)


Company Filing History:


Years Active: 1985

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2 patents (USPTO):Explore Patents

Title: Walter Fabian: Innovator in Semiconductor Technology

Introduction

Walter Fabian is a notable inventor based in Burlington, MA (US), recognized for his contributions to semiconductor technology. He holds 2 patents that showcase his innovative approaches in the field. His work has significantly impacted the development of advanced electronic devices.

Latest Patents

Walter Fabian's latest patents include a method for forming sub-micron electrodes by oblique deposition. This method involves creating a field effect transistor with a submicron gate length. The process utilizes angular deposition of metal through an aperture in a thick masking layer, allowing for precise control over the gate electrode's dimensions. The parameters of the deposition are carefully selected to achieve a gate length of less than a micron, utilizing conventional optical photolithographic techniques.

Another significant patent is the deep mesa process for fabricating monolithic integrated Schottky barrier devices. This method focuses on gallium arsenide devices, employing a deep mesa step structure for contact isolation. The technique enhances step coverage of conductive films and addresses challenges in fine line definition during the photolithographic process. The result is the successful fabrication of planar mixer millimeter-wave diodes with low series resistance and reduced parasitic capacitance.

Career Highlights

Throughout his career, Walter Fabian has worked with prominent companies such as Sperry Corporation and Raytheon Company. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Walter has collaborated with various professionals in the field, including his coworker Frank H Spooner. Their joint efforts have further advanced the development of semiconductor technologies.

Conclusion

Walter Fabian's innovative work in semiconductor technology, particularly in the areas of sub-micron electrodes and Schottky barrier devices, has made a lasting impact on the industry. His patents reflect a commitment to advancing electronic device capabilities and efficiency.

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