W Tao

Title: W Tao - Innovator in Metalorganic Chemical Vapor Deposition

Introduction

W Tao is a notable inventor based in Blacksburg, VA (US). He has made significant contributions to the field of materials science, particularly in the development of high-quality layered structure oxide ferroelectric thin films. His innovative approach has implications for various device applications.

Latest Patents

W Tao holds a patent for a method titled "Metalorganic chemical vapor deposition of layered structure oxides." This patent describes a process for fabricating high-quality layered structure oxide ferroelectric thin films. The deposition process involves a chemical reaction between volatile metal organic compounds and other gases in a reactor, resulting in a nonvolatile solid that deposits on a substrate. The source materials for this process include organometallic compounds and oxygen. The reactor used for deposition can be either a hot wall or a cold wall reactor, with vapors introduced through bubblers or a direct liquid injection system. The resulting ferroelectric films have applications in capacitors, dielectric resonators, heat sensors, transducers, actuators, nonvolatile memories, optical waveguides, and displays. W Tao has 1 patent to his name.

Career Highlights

Throughout his career, W Tao has worked with various companies, including Cera M GmbH and Sharp Kabushiki. His experience in these organizations has allowed him to refine his expertise in chemical vapor deposition techniques and materials science.

Collaborations

W Tao has collaborated with notable professionals in his field, including Seshu B Desu. These collaborations have contributed to advancements in the development of ferroelectric materials and their applications.

Conclusion

W Tao's innovative work in metalorganic chemical vapor deposition has paved the way for advancements in ferroelectric thin films and their applications in various devices. His contributions continue to influence the field of materials science and engineering.