Santa Fe, NM, United States of America

Vladmir Matias

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Innovations of Vladmir Matias

Introduction

Vladmir Matias is an accomplished inventor based in Santa Fe, NM (US). He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative spirit and technical expertise.

Latest Patents

His latest patents include a groundbreaking invention related to single crystal semiconductor structures. This invention features a strain compensation layer, an amorphous substrate, a lattice matching layer with multiple single crystal layers, and a single crystal semiconductor layer. The design incorporates a direction control film and a buffer layer, both of which enhance the performance and reliability of semiconductor devices.

Career Highlights

Vladmir has worked with prominent companies in the technology sector, including Samsung Electronics Co., Ltd. and Ibeam Materials, Inc. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge projects in semiconductor manufacturing.

Collaborations

Throughout his career, Vladmir has collaborated with talented professionals such as Junhee Choi and Joohun Han. These partnerships have fostered a creative environment that has led to innovative solutions in the semiconductor industry.

Conclusion

Vladmir Matias is a notable inventor whose work in semiconductor technology has the potential to impact various applications. His patents reflect a commitment to innovation and excellence in his field.

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