Besançon, France

Vincent Astié

This inventor holds 1 USPTO granted patent. Top assignee: Université De Franche Comte. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Vincent Astié. Retrieved from https://idiyas.com/inventor/vincent-astié

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Vincent Astié: Ferroelectric Materials and Layered Solid-State Devices.

Introduction

Vincent Astié is an inventor associated with Université de Franche-Comté in Besançon, France. His patent work concerns layered solid-state elements that use ferroelectric materials, with potential applications in electronic and optical devices.

Latest Patents

Astié is named on 1 patent: “Layered solid state element comprising a ferroelectric layer and method for manufacturing the same.” The invention describes a crystalline lithium niobate–tantalate ferroelectric layer with a specified orientation relative to a substrate. The layer is grown epitaxially from a lanthanide nickelate buffer layer. The resulting structure may be used in thin-film bulk acoustic resonators for integrated electronic circuits, including RF filters, as well as in guided optical devices such as integrated optical modulators.

Career Highlights

The patent reflects Astié’s work on ferroelectric thin films and layered materials. These technologies can support the development of compact components for signal processing and integrated photonics.

Collaborations

Austrīne Bartasyte and Sabina Kuprenaite are identified as Astié’s coworkers in the provided information. The patent also connects his work with Université de Franche-Comté.

Conclusion

Vincent Astié’s documented invention focuses on an epitaxially grown ferroelectric layer designed for potential use in acoustic and optical components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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