Company Filing History:
Years Active: 2024-2025
Title: Victor Van Der Veen: Innovator in DRAM Technology
Introduction
Victor Van Der Veen is a notable inventor based in Leusden, Netherlands. He has made significant contributions to the field of DRAM technology, holding a total of 4 patents. His work focuses on enhancing memory controller functionalities to mitigate issues such as rowhammer, which can affect the reliability of DRAM devices.
Latest Patents
Victor's latest patents include innovative solutions aimed at improving DRAM performance. One of his patents is for a "DRAM with quick random row refresh for rowhammer mitigation." This invention provides a memory controller that identifies a marker command directed to a specific row in DRAM. If a certain threshold probability is met, the controller commands the DRAM to refresh a neighboring row, thereby enhancing data integrity. Another significant patent is for "Dynamic rowhammer management." This invention allows a memory controller to manage the rowhammer effect by receiving an activation count threshold from the DRAM device. The controller counts row activation commands and sends a refresh command based on the comparison of the counted commands with the threshold value.
Career Highlights
Victor Van Der Veen is currently employed at Qualcomm Incorporated, a leading technology company known for its innovations in telecommunications and semiconductor technology. His work at Qualcomm has allowed him to focus on cutting-edge developments in memory technology, contributing to the advancement of DRAM systems.
Collaborations
Throughout his career, Victor has collaborated with talented professionals in the field, including Pankaj Deshmukh and Behnam Dashtipour. These collaborations have fostered an environment of innovation and have led to the development of impactful technologies.
Conclusion
Victor Van Der Veen is a prominent figure in the realm of DRAM technology, with a focus on mitigating rowhammer effects through innovative memory controller designs. His contributions continue to shape the future of memory technology, ensuring greater reliability and performance in DRAM devices.