Austin, TX, United States of America

Veena Misra


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 151(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: **Veena Misra: A Trailblazer in MOS Transistor Technology**

Introduction

Veena Misra is a prominent inventor based in Austin, TX, known for her significant contributions to semiconductor technology. With a focus on innovations in the field of metal-oxide-semiconductor (MOS) transistors, she has made strides that enhance the efficiency and effectiveness of electronic devices.

Latest Patents

Veena holds a patent titled "Method for forming an MOS transistor having a metallic gate electrode". This groundbreaking invention involves a meticulous process for creating metal gate MOS transistors. The method initiates by establishing source and drain electrodes within a substrate. These regions are self-aligned to a lithographically-patterned feature, ensuring precision in design. Following the formation of the source and drain regions, the transistor features are processed to fill them with a metallic gate layer. The completion of this process involves chemical mechanical polishing to form a metallic plug region that functions as the MOS gate. This innovation not only enhances transistor performance but also provides a scalable approach to MOS technology.

Career Highlights

Veena's career has been distinguished by her role at Motorola Corporation, where she has actively contributed to advanced technological developments. Her expertise in semiconductor devices has positioned her as a key figure in her field, leading to her successful patent application.

Collaborations

Throughout her career, Veena has collaborated with notable colleagues, including Suresh Venkatesan and Christopher C Hobbs. Their combined expertise has fostered an environment of innovation, resulting in enhanced technologies and methodologies within the semiconductor industry.

Conclusion

Veena Misra's contributions to the field of semiconductor technology are a testament to her skill and dedication as an inventor. Her patent represents a significant step forward in MOS transistor development, showcasing her commitment to advancing electronic device technology. As she continues her work at Motorola Corporation, her innovations promise to shape the future of the electronics industry.

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