Essex Junction, VT, United States of America

Van Butler

USPTO Granted Patents = 3 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2014

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3 patents (USPTO):Explore Patents

Title: Innovations in Phase Change Memory by Van Butler

Introduction

Van Butler is an accomplished inventor based in Essex Junction, Vermont, known for his significant contributions to the field of phase change memory technology. With a total of three patents to his name, Butler has focused on optimizing write characteristics in memory systems, which has implications for efficiency and performance in data storage.

Latest Patents

Butler's latest patents include "Systems, methods, and devices with write optimization in phase change memory" and "Methods and systems for phase change memories and arrays with improved write characteristics." These innovations address the challenges associated with writing data efficiently in phase change memory systems. By exchanging SETs and RESETs during the writing process, Butler's methods allow for more efficient data handling. This approach not only reduces the time and power consumption associated with SET operations but also enhances the overall performance of memory systems.

Career Highlights

Throughout his career, Van Butler has worked with various companies, including Advanced Memory Corporation. His expertise in memory technology has positioned him as a key figure in the development of advanced data storage solutions. His work has contributed to the evolution of phase change memory, making it a more viable option for modern computing needs.

Collaborations

Butler has collaborated with notable professionals in the field, including Yuanxing Li and Ryan A Jurasek. These partnerships have fostered innovation and have been instrumental in advancing the technology surrounding phase change memory.

Conclusion

Van Butler's contributions to phase change memory technology exemplify the importance of innovation in the field of data storage. His patents and collaborative efforts continue to influence the development of more efficient memory systems, showcasing the potential for future advancements in this area.

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