Company Filing History:
Years Active: 1985
Title: Ulf Burker: Innovator in MOS Device Technology
Introduction
Ulf Burker is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS transistors. His innovative methods have paved the way for advancements in VLSI technology.
Latest Patents
Ulf Burker holds a patent for a method of making MOS devices using metal silicides or polysilicon. This invention relates to a method for producing MOS transistors with flat source/drain zones, short channel lengths, and a self-aligned contacting plane comprised of a metal silicide. The method involves producing source/drain zones in the semiconductor substrate through out-diffusion of the contacting plane, which consists of a doped metal silicide deposited directly on the substrate. This technique is particularly beneficial for creating NMOS, PMOS, and CMOS circuits, allowing for a very high packing density and an independent additional wiring plane of very low resistance. Ulf Burker has 1 patent to his name.
Career Highlights
Ulf Burker has had a distinguished career at Siemens Aktiengesellschaft, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of efficient and high-performance electronic devices.
Collaborations
Ulf has collaborated with notable colleagues such as Ulrich Schwabe and Franz Neppl, further enhancing the innovative environment at Siemens.
Conclusion
Ulf Burker's contributions to MOS device technology exemplify the impact of innovation in the semiconductor industry. His work continues to influence the development of advanced electronic circuits and systems.