Tzung Ling Lin

Title: Tzung Ling Lin: Innovator in NAND Flash Memory Technology

Introduction

Tzung Ling Lin is a notable inventor based in Banciao, Taiwan. He has made significant contributions to the field of NAND flash memory technology, holding 2 patents that showcase his innovative approach to programming methods in memory devices.

Latest Patents

One of Tzung Ling Lin's latest patents involves a programming method for NAND flash memory devices aimed at reducing excess electrons in channels. This method utilizes a self-boosting scheme to eliminate excess electrons in the channel of an inhibit cell string, which can otherwise lead to programming disturbances. By applying a negative voltage to the word lines connected to the inhibit cell string before boosting the channel, the method enhances program immunity. Additionally, the patent describes a row decoder circuitry to facilitate the programming operation and a file system architecture based on the programming scheme to improve file management efficiency.

Career Highlights

Throughout his career, Tzung Ling Lin has worked with prominent companies in the semiconductor industry, including Powerchip Corporation and Powerchip Technology Corporation. His experience in these organizations has allowed him to refine his skills and contribute to advancements in memory technology.

Collaborations

Tzung Ling Lin has collaborated with notable professionals in his field, including Takashi Miida and Riichiro Shirota. These collaborations have further enriched his work and contributed to the development of innovative solutions in NAND flash memory technology.

Conclusion

Tzung Ling Lin's contributions to NAND flash memory technology through his patents and career experiences highlight his role as an influential inventor in the field. His innovative programming methods continue to impact the efficiency and reliability of memory devices.