Taichung, Taiwan

Tzu-Yi Yu


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2013

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Tzu-Yi Yu: Innovator in Semiconductor Technology

Introduction

Tzu-Yi Yu is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the treatment of dislocations in GaN-containing semiconductor layers. His innovative approach aims to enhance the efficiency of light-emitting devices.

Latest Patents

Tzu-Yi Yu holds a patent titled "Method for treating the dislocation in a GaN-containing semiconductor layer." This patent describes a method that involves providing a substrate and forming a GaN-containing semiconductor layer with threading dislocations on it. An etching process using an etching gas is then performed to remove these dislocations, ultimately increasing the efficiency of light-emitting devices. He has 1 patent to his name.

Career Highlights

Tzu-Yi Yu is affiliated with National Yang Ming Chiao Tung University, where he continues to advance research in semiconductor technology. His work has garnered attention for its potential applications in improving electronic devices.

Collaborations

He has collaborated with notable colleagues such as Wei-I Lee and Yen-Hsien Yeh, contributing to a dynamic research environment focused on innovation in semiconductor technology.

Conclusion

Tzu-Yi Yu's contributions to the field of semiconductor technology exemplify the impact of innovative thinking in enhancing device efficiency. His work continues to inspire advancements in the industry.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…