Tung-Sheng Kuan

Title: Innovations of Tung-Sheng Kuan

Introduction

Tung-Sheng Kuan is a notable inventor based in Chappaqua, NY, with a focus on advancements in semiconductor technology. He holds three patents that contribute significantly to the field of low-temperature epitaxial growth processes.

Latest Patents

Kuan's latest patents include a comprehensive process for low-temperature epitaxial growth. This innovative system and method allow for the growth of low defect density epitaxial layers of silicon on imperfectly cleaned silicon surfaces. The process utilizes selective or blanket deposition at low temperatures through the APCVD method. A thin initial layer of silicon is grown from silane or disilane, followed by the remainder of the film from dichlorosilane (DCS) at temperatures ranging from 550°C to 850°C. This method ensures that the subsequent growth does not introduce additional defects and allows for controlled n-type doping. The deposition is carried out in an ambience primarily composed of helium, with some hydrogen to prevent surface oxidation.

Career Highlights

Kuan is associated with the International Business Machines Corporation, commonly known as IBM. His work at IBM has been pivotal in advancing semiconductor manufacturing techniques, particularly in the area of low-temperature processes.

Collaborations

Some of Kuan's notable coworkers include Paul David Agnello and Thomas O Sedgwick, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Tung-Sheng Kuan's contributions to low-temperature epitaxial growth processes have made a significant impact on semiconductor technology. His innovative approaches continue to influence advancements in the industry.