Company Filing History:
Years Active: 1989-1991
Title: Innovations by Tung H Weng
Introduction
Tung H Weng is a notable inventor based in Rochester, MI (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of low resistance ohmic contacts for p-type InP materials. With a total of 2 patents to his name, Weng's work has implications for improving the performance of semiconductor devices.
Latest Patents
Weng's latest patents focus on the use of a titanium tungsten (TiW) diffusion barrier for AuZn ohmic contacts to p-type InP. His innovative approach involves a low metal resistance ohmic contact that is alloyed to p InP material. The TiW layer serves as a diffusion barrier between an underlay of AuZn and an overlay of Au. This process enhances the fabrication of InP JFETs, which contain a gate contact made up of AuZn, TiW, and Au layers. The incorporation of the TiW layer leads to unique processing techniques and improved performance in InP semiconductor devices.
Career Highlights
Tung H Weng is currently associated with the United States Navy, where he contributes his expertise in semiconductor technology. His work has been instrumental in advancing the understanding and application of materials in electronic devices.
Collaborations
Weng has collaborated with notable colleagues such as John Bradley Boos and Nicolas A Papanicolaou. These partnerships have fostered innovation and have been crucial in the development of his patented technologies.
Conclusion
Tung H Weng's contributions to semiconductor technology through his patents demonstrate his commitment to innovation in the field. His work continues to influence the development of advanced electronic devices, showcasing the importance of research and collaboration in driving technological progress.