Higashiyamato, Japan

Tsutomu Wada


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 1978

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1 patent (USPTO):Explore Patents

Title: Tsutomu Wada: Innovator in Semiconductor Technology

Introduction

Tsutomu Wada is a notable inventor based in Higashiyamato, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of insulated gate type field effect transistors. His innovative work has led to advancements that are crucial in modern electronic devices.

Latest Patents

Wada holds 1 patent for his invention related to insulated gate type field effect transistors. This patent describes a structure that includes spaced source and drain regions, an insulating film between these regions, and a gate electrode mounted on the insulating film. Notably, an inverted frustum shaped polycrystalline semiconductor layer is formed on the insulating film, enhancing the performance of the transistor.

Career Highlights

Tsutomu Wada is associated with Nippon Telegraph and Telephone Public Corporation, where he has contributed to various projects in semiconductor research and development. His work has been instrumental in pushing the boundaries of technology in telecommunications and electronics.

Collaborations

Wada has collaborated with esteemed colleagues such as Tetsushi Sakai and Yutaka Sakakibara. Their combined expertise has fostered a productive environment for innovation and development in their field.

Conclusion

Tsutomu Wada's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His work continues to influence advancements in technology, making him a significant figure in the realm of inventions.

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