This inventor holds 1 USPTO granted patent. Top assignee: Faraday Technology Corporation. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: Tsung-Hsiao Lin: Innovator in Electrostatic Discharge Protection
Introduction
Tsung-Hsiao Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of electrostatic discharge (ESD) protection technology. His innovative work has led to the development of a unique patent that addresses critical challenges in electronic device protection.
Latest Patents
Tsung-Hsiao Lin holds a patent for an "Electrostatic Discharge Protection Apparatus." This apparatus includes a first well, a second well, a first doping region, and a second doping region. The first well is situated in a substrate with a first conductivity type, while the second well is located within the first well. The design ensures effective ESD protection, making it a valuable asset in electronic applications.
Career Highlights
Tsung-Hsiao Lin is currently employed at Faraday Technology Corporation, where he continues to innovate and develop advanced technologies. His work at the company has positioned him as a key player in the field of semiconductor technology and ESD protection.
Collaborations
Tsung-Hsiao Lin collaborates with Chia-Ku Tsai, contributing to various projects and advancements in their field. Their partnership enhances the innovative capabilities of their work.
Conclusion
Tsung-Hsiao Lin's contributions to electrostatic discharge protection technology exemplify his commitment to innovation. His patent and ongoing work at Faraday Technology Corporation highlight his role as a significant inventor in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile