Company Filing History:
Years Active: 1997
Title: The Innovations of Tracy Fu in P-Type Gallium Nitride
Introduction
Tracy Fu is a prominent inventor based in Berkeley, California. She has made significant contributions to the field of semiconductor technology, particularly in the development of p-type gallium nitride (pGaN). Her work has the potential to revolutionize electronic devices, especially in the areas of ultraviolet and blue light-emitting diodes and lasers.
Latest Patents
Tracy Fu holds one patent related to p-type gallium nitride. This patent outlines several methods for producing p-type gallium nitride, which has been a long-sought material for electronic applications. The discovery of pGaN and the methods for its production will enable advancements in various technologies, including blue photocathode elements. The patent details the use of molecular beam epitaxy on substrates maintained at specific temperatures, assisted by a nitrogen beam of appropriate energy. This process has resulted in several types of p-type GaN with hole concentrations of approximately 5 x 10^11 /cm^3 and hole mobilities of about 500 cm^2 /V-sec, measured at 250 K. Additionally, p-type GaN can be formed from unintentionally-doped material or can be doped with magnesium through various methods.
Career Highlights
Tracy Fu is affiliated with the University of California, where she continues her research and development in semiconductor materials. Her innovative work in p-type gallium nitride has positioned her as a key figure in the field of electronic materials.
Collaborations
Tracy has collaborated with notable colleagues, including Michael Rubin and Nathan Newman, who have contributed to her research endeavors.
Conclusion
Tracy Fu's contributions to the development of p-type gallium nitride represent a significant advancement in semiconductor technology. Her innovative methods and research have the potential to impact various electronic applications, paving the way for future advancements in the field.