Toshitake Nakata

Title: The Innovations of Toshitake Nakata

Introduction

Toshitake Nakata is a notable inventor based in Osaka, Japan. He has made significant contributions to the field of light-emitting diode technology. His innovative work has led to the development of a unique light-emitting diode device that showcases his expertise in semiconductor materials.

Latest Patents

Nakata holds a patent for a light-emitting diode device and the method for producing the same. This device comprises an n-type silicon carbide substrate with first and second major surfaces that are inclined at a predetermined angle of not less than 3 degrees from a {0001} plane. The device features an n-type silicon carbide layer grown on the first major surface and a p-type silicon carbide layer grown on the n-type layer. Additionally, it includes a p-type ohmic electrode and an n-type ohmic electrode formed on specific areas of the respective layers. The diode element is designed with a trapezoidal form in a cross-section orthogonal to the first major surface, providing enhanced performance characteristics.

Career Highlights

Toshitake Nakata is associated with Sanyo Electric Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's portfolio but has also impacted the broader field of electronics.

Collaborations

Nakata has collaborated with notable colleagues such as Tatsuhiko Niina and Kiyoshi Ohta. Their combined efforts have fostered innovation and development in their respective projects.

Conclusion

Toshitake Nakata's contributions to light-emitting diode technology exemplify the spirit of innovation in the semiconductor industry. His patent and collaborative efforts highlight the importance of teamwork in achieving technological advancements.