Urawa, Japan

Toru Koga


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: The Innovations of Toru Koga

Introduction

Toru Koga is a notable inventor based in Urawa, Japan. He has made significant contributions to the field of semiconductor memory technology. His innovative work has led to the development of a unique memory cell structure that enhances the efficiency of data storage and retrieval.

Latest Patents

Toru Koga holds a patent for a semiconductor memory having writing and reading transistors. This invention discloses a semiconductor memory with a self-amplifying cell structure. It utilizes a writing transistor and a reading transistor with a floating gate as a charge storage node for each memory cell. The writing and reading transistors are of opposite conductivity types, enhancing the functionality of the memory cell. The design allows for efficient operation, with the reading transistor being formed in a trench and the word line overlying both transistors.

Career Highlights

Koga is associated with Hitachi, Ltd., where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's portfolio but has also influenced the broader field of electronics. With a focus on innovative memory solutions, Koga continues to push the boundaries of what is possible in semiconductor design.

Collaborations

Throughout his career, Toru Koga has collaborated with esteemed colleagues such as Shuji Shukuri and Shinichiro Kimura. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Toru Koga's contributions to semiconductor memory technology exemplify the spirit of innovation. His patent and collaborative efforts highlight the importance of teamwork in achieving technological advancements. Koga's work continues to influence the field, paving the way for future innovations in memory technology.

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