Tooru Onoda

Title: Tooru Onoda: Innovator in Polycrystalline Silicon Materials

Introduction

Tooru Onoda is a notable inventor based in Yamaguchi, Japan. He has made significant contributions to the field of materials science, particularly in the development of polycrystalline silicon materials. With a total of 2 patents to his name, Onoda's work has implications for the production of silicon single crystals.

Latest Patents

Onoda's latest patents focus on a polycrystalline silicon material designed for producing silicon single crystals. The first patent describes a polycrystalline silicon material that contains multiple chunks of polycrystalline silicon. It specifies that the total concentration of donor elements (Cd1) and acceptor elements (Ca1) within the bulk body, as well as on the surface (Cd2 and Ca2), must satisfy the relation of 2 [ppta] ≤ (Cd1 + Cd2) - (Ca1 + Ca2) ≤ 8 [ppta]. The second patent also addresses a similar polycrystalline silicon material, but with a different concentration relation, stating that 5 [ppta] ≤ (Ca1 + Ca2) - (Cd1 + Cd2) ≤ 26 [ppta].

Career Highlights

Throughout his career, Onoda has worked with prominent companies, including Tokuyama Corporation. His experience in these organizations has allowed him to refine his expertise in materials science and contribute to innovative solutions in the industry.

Collaborations

Onoda has collaborated with notable coworkers such as Takuya Asano and Kouichi Saiki. Their joint efforts have likely enhanced the research and development of polycrystalline silicon materials.

Conclusion

Tooru Onoda's contributions to the field of polycrystalline silicon materials demonstrate his innovative spirit and dedication to advancing technology. His patents reflect a deep understanding of material properties and their applications in producing silicon single crystals.