Company Filing History:
Years Active: 1999-2000
Title: Tomohiko Mori: Innovator in Electrode Technology
Introduction
Tomohiko Mori is a prominent inventor based in Aichi-ken, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of electrodes for p-type group III nitride compounds. With a total of 2 patents, his work has advanced the understanding and application of semiconductor materials.
Latest Patents
Mori's latest patents focus on methods and devices related to electrodes for p-type group III nitride. One of his notable inventions is an electrode for a Group III nitride compound semiconductor that features a double layer structure. The first metal electrode layer consists of nickel (Ni), while the second layer is made of gold (Au). The Ni layer is applied to the p-type conduction Group III nitride semiconductor, followed by the Au layer. Through heat treatment, the distribution of Ni and Au is altered, allowing Au to penetrate deeper into the semiconductor than Ni. This innovation results in reduced resistivity, improved ohmic characteristics, and enhanced adhesive strength of the electrode.
Career Highlights
Tomohiko Mori is currently employed at Toyoda Gosei Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing more efficient and reliable semiconductor devices, which are crucial for various electronic applications.
Collaborations
Mori has collaborated with notable colleagues, including Naoki Shibata and Junichi Umezaki. Their combined expertise has contributed to the successful development of innovative technologies in the semiconductor field.
Conclusion
Tomohiko Mori's contributions to electrode technology for p-type group III nitride semiconductors highlight his role as a leading inventor in the industry. His patents reflect a commitment to advancing semiconductor technology, which is essential for the future of electronics.