Thurman J Rodgers

Title: Thurman J Rodgers: Innovator in Semiconductor Memory Devices

Introduction:

Thurman J Rodgers, based in Palo Alto, CA, is a renowned inventor in the field of semiconductor memory devices. With three patents to his name, Rodgers has made significant contributions to the development of electrically programmable read-only memory (EPROM) and programmable read-only memory (PROM) devices. His innovative approaches have revolutionized the functionality and performance of memory storage in the semiconductor industry.

Latest Patents:

Rodgers' latest patent contributions include two groundbreaking designs for VMOS floating gate memory devices. The first patent describes a memory device that harnesses an array of memory cells, each built as a single V-type Metal-Oxide-Semiconductor Field-Effect Transistor (VMOSFET). This technology utilizes a capacitance-coupled version of threshold logic to achieve the normal AND function in data-word addressing, significantly improving memory efficiency.

In his second patent, Rodgers presents a PROM device that also employs an array of memory cells defined by the intersection of bit lines and word address lines. The device utilizes V-type MOSFETs and a capacitance-coupled version of threshold logic, enabling efficient data-word addressing. The design incorporates a method of injecting hot electrons into the gate oxide, allowing data to be written into the memory cell.

Career Highlights:

Throughout his career, Thurman J Rodgers has demonstrated a profound understanding of semiconductor memory technology. His groundbreaking designs have paved the way for more advanced and efficient memory storage devices. Rodgers' expertise in VMOS memory devices has made a significant impact in the industry.

Collaborations:

Thurman J Rodgers has collaborated extensively with his coworker, James D Trotter, at American Microsystems, Inc. Their synergistic efforts have led to the successful development of multiple innovative memory technologies. Together, they have strived to push the boundaries of semiconductor memory devices, revolutionizing the efficiency and functionality of data storage.

Conclusion:

Thurman J Rodgers has played a pivotal role in the advancements of semiconductor memory devices, focusing on the development of VMOS floating gate memory technology. With numerous patents to his name, Rodgers has made significant contributions to the field, improving memory efficiency and functionality. His innovative designs continue to inspire and shape the future of the semiconductor industry.