Dresden, Germany

Thomas Shuelke


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:

goldMedal1 out of 832,680 
Other
 patents

Years Active: 2001

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1 patent (USPTO):

Title: Thomas Shuelke: Innovator in Semiconductor Metallization

Introduction: Thomas Shuelke, an inventive mind residing in Dresden, Germany, has made significant contributions to the field of semiconductor technology. With a focus on enhancing the efficiency of metallization processes, Shuelke holds a notable patent that addresses the challenges of connecting semiconductor structures to be electrically conductive.

Latest Patents: Shuelke's patent, titled "Process and device for production of metallic coatings on semiconductor structures," introduces an innovative method for metallization. This invention details a process that enables the production of metallic coatings on semiconductor structures by depositing materials from a vapor phase under vacuum. It uniquely allows for the creation of electrically conductive areas on the surface using strip conductors in various planes and facilitates connections between different layers.

Career Highlights: Throughout his career, Shuelke has embraced groundbreaking techniques in semiconductor production. His patent emphasizes the use of a pulsed vacuum-arc evaporator to deposit a barrier layer on trenches and holes within substrate materials, such as silicon dioxide or other inorganic and organic substances. This method not only improves the metallization process but also ensures that high aspect ratio trenches and holes are metal-coated without any hollow spaces.

Collaborations: In his professional journey, Thomas Shuelke has collaborated with notable colleagues such as Wolfgang Klimes and Christian Wenzel. These partnerships have likely enriched his work and contributed to the advancement of innovative semiconductor technologies.

Conclusion: Thomas Shuelke's work stands as a testament to innovation in the semiconductor sector. His contributions through his patented process significantly enhance the efficiency and effectiveness of semiconductor structures, paving the way for future advancements in electronics and related fields.

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