North Plainfield, NJ, United States of America

Thomas R Fullowan


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 32(Granted Patents)


Location History:

  • North Plainfield, NJ (US) (1992)
  • Warren, NJ (US) (1993)

Company Filing History:


Years Active: 1992-1993

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2 patents (USPTO):Explore Patents

Title: The Innovative Journey of Thomas R. Fullowan

Introduction

Thomas R. Fullowan is an accomplished inventor located in North Plainfield, NJ, United States. With a strong background in semiconductor technology, he has made significant contributions to the field, as evidenced by his two patents. His work at AT&T Bell Laboratories has paved the way for advancements in semiconductor device manufacturing and tungsten patterning processes.

Latest Patents

Fullowan's latest patents include innovative methods that enhance the fabrication of semiconductor devices and the formation of patterned tungsten layers. His first patent, titled "Method for Forming Patterned Tungsten Layers," details a process where a layer predominantly comprising tungsten is transformed into precise patterns with vertical walls. This technique utilizes titanium as a mask and plasma etching in a fluorine-containing plasma, such as CF4 or SF6. The method achieves success through an etch stop reaction on the tungsten’s sidewalls, preventing unwanted horizontal etching.

The second patent, "Method of Making Semiconductor Devices," outlines a process for etching a semiconductor layer using a patterned metal layer as an etch mask. It includes the use of a mask metal layer, typically titanium, overlying a contact metal layer that may contain gold. This inventive method has shown particular effectiveness in manufacturing InP-based heterojunction bipolar transistors.

Career Highlights

During his tenure at AT&T Bell Laboratories, Fullowan has focused on exploring and developing new methodologies in semiconductor technology. His work has led to the creation of advanced techniques that streamline the manufacturing processes, thereby enhancing the efficiency and performance of semiconductor devices.

Collaborations

Throughout his career, Fullowan has collaborated with notable professionals in the field, including Stephen J. Pearton and Fan Ren. Their combined expertise has contributed to the successful development of innovative solutions and further established their presence in the semiconductor industry.

Conclusion

Thomas R. Fullowan's innovative spirit and dedication to advancing semiconductor technology have resulted in significant contributions recognized through his patents. His work at AT&T Bell Laboratories continues to influence the manufacturing processes of semiconductor devices, showcasing his commitment to the evolution of this critical field.

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