Company Filing History:
Years Active: 2007
Title: Innovations in Semiconductor Technology: The Patents of Thomas Boone
Introduction: Thomas Boone, based in Hamden, CT, is an accomplished inventor known for his significant contributions to the field of semiconductor technology. With one patent to his name, he has made strides that could revolutionize the efficiency and effectiveness of electronic and optoelectronic devices.
Latest Patents: Thomas Boone's patent, titled "Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices," focuses on producing highly doped semiconductor materials. His innovative methods allow for doping densities that surpass traditional saturation limits without detrimental side effects. This groundbreaking technology leads to improved electronic and optoelectronic components, paving the way for devices and systems that are not only faster and smaller but also more efficient in light capture and emission.
Career Highlights: Thomas Boone's career has been marked by his dedication to the advancement of semiconductor materials. Working at Yale University, he has focused on developing materials in an anion-rich environment, employing moderate substrate temperatures in oxygen-poor conditions. His work has demonstrated fewer non-radiative recombination centers, resulting in longer minority carrier lifetimes, enhancing the performance of high-density electronic and optoelectronic devices.
Collaborations: Throughout his career, Thomas has collaborated with notable peers, including Eric Harmon and Robert David Koudelka. These partnerships have enriched his research and contributed to the successful outcomes of his patented innovations.
Conclusion: Thomas Boone stands out as a significant figure in the semiconductor industry, with his patents representing a leap forward in materials science. His work at Yale University showcases the potential for enhanced performance in electronic and optoelectronic devices, ultimately leading to advancements that could redefine the boundaries of technology in these fields.