Company Filing History:
Years Active: 2009
Title: The Innovations of Tasoltan Tazretovich Basiev
Introduction
Tasoltan Tazretovich Basiev is a notable inventor based in Moscow, Russia. He has made significant contributions to the field of laser materials, particularly in the development of single crystal active media for solid-state lasers. His work focuses on advancing technologies that operate in the middle-infrared range of the optical spectrum.
Latest Patents
Basiev holds a patent for a single crystal laser material and the system containing this material. The invention pertains to laser materials, specifically designed for solid-state lasers that operate in the mid-infrared (Mid-IR) 4-5 µm range. This innovative material features a single crystal orthorhombic structure with a space group of D-Fddd. The composition includes Lead, Gallium, and Sulfur, and is doped with Dysprosium, following the general formula: PbDyGaS, where 0.0001 < x < 0.05. Lasers utilizing this material are particularly advantageous for applications such as lidar, free space communication, and environmental monitoring.
Career Highlights
Throughout his career, Basiev has focused on the development of advanced laser technologies. His work has contributed to the understanding and application of single crystal materials in various scientific and industrial fields. His innovative approach has positioned him as a key figure in the advancement of laser technology.
Collaborations
Basiev has collaborated with notable colleagues, including Dmitri Valer'evich Badikov and Valeri Vladimirovich Badikov. These collaborations have further enhanced his research and development efforts in the field of laser materials.
Conclusion
Tasoltan Tazretovich Basiev's contributions to the field of laser technology are significant and impactful. His innovative patent for single crystal laser materials showcases his expertise and dedication to advancing scientific knowledge. His work continues to influence various applications in technology and environmental monitoring.