Company Filing History:
Years Active: 1994-1996
Title: Tamas S Horanyi: Innovator in Semiconductor Technology
Introduction
Tamas S Horanyi is a notable inventor based in Budapest, Hungary. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approaches to enhancing semiconductor performance.
Latest Patents
Horanyi's latest patents include a "Method for chemical surface passivation for in-situ bulk lifetime" and a "Method for stabilizing the effective dissolution valence of silicon." The first patent focuses on improving minority carrier bulk lifetime maps through in-situ measurement techniques. This method utilizes a chemical solution for surface passivation, effectively reducing surface recombination velocities to 10 cm/second or less. The second patent enhances the accuracy of electrochemical profiling measurements by stabilizing the semiconductor's effective dissolution valence, ensuring a more reliable assessment of semiconductor characteristics.
Career Highlights
Tamas S Horanyi is affiliated with the Semiconductor Physics Laboratory Rt, where he continues to advance research in semiconductor technologies. His work has been instrumental in developing methods that improve the efficiency and reliability of semiconductor devices.
Collaborations
Horanyi collaborates with Gyorgy Ferenczi, contributing to the innovative research environment at the Semiconductor Physics Laboratory Rt.
Conclusion
Tamas S Horanyi's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor performance and reliability.