Takeshi T N Nogami

Title: Innovations of Takeshi T N Nogami

Introduction

Takeshi T N Nogami is a notable inventor based in Atsugi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of copper interconnect formation. With a total of 2 patents, his work has advanced the methods used in semiconductor fabrication.

Latest Patents

Takeshi's latest patents include a method of copper interconnect formation using atomic layer copper deposition and a device thereby formed. This innovative method involves fabricating a semiconductor interconnect structure that includes a substrate with an interconnect structure patterned therein, a barrier layer, a pre-seed layer, a seed layer, a bulk interconnect layer, and a sealing layer. The barrier layer is formed using atomic layer deposition techniques, followed by the creation of a pre-seed layer to establish a heteroepitaxial interface. The seed layer is then formed using standard deposition techniques, leading to a homoepitaxial interface. The process concludes with bulk deposition of conducting materials, removal of excess material, and the formation of a sealing layer to complete the interconnect structure.

Career Highlights

Throughout his career, Takeshi has worked with various companies, including Advanced Micro Devices Corporation. His expertise in semiconductor technology has positioned him as a valuable asset in the industry.

Collaborations

Takeshi has collaborated with notable professionals in the field, including Sergey D Lopatin and Carl J Galewski. These collaborations have further enriched his contributions to semiconductor innovations.

Conclusion

Takeshi T N Nogami's work in semiconductor technology, particularly in copper interconnect formation, showcases his innovative spirit and dedication to advancing the field. His patents reflect a deep understanding of complex fabrication processes that are essential for modern electronics.