Chigasaki, Japan

Takeshi Hisamune


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 1998

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Takeshi Hisamune

Introduction

Takeshi Hisamune is a notable inventor based in Chigasaki, Japan. He has made significant contributions to the field of ion implantation technology. His work has led to advancements that are crucial for various applications in semiconductor manufacturing.

Latest Patents

Hisamune holds a patent for an ion implantation apparatus. This apparatus is designed with an ion source and a mass spectrometer that includes an analyzer magnet. It is specifically adapted to extract ions with predetermined kinetic energy and mass from other ions produced in the ion source. The apparatus features a scanner system that scans an ion beam of the extracted ions and irradiates this beam onto a substrate. The system includes a deflection electro-magnet that is positioned downstream of the mass spectrometer, allowing for the deflection of the ion beam in a specific plane relative to a reference axis. Additionally, the apparatus comprises multiple vacuum chamber portions that facilitate the passage of the ion beam while maintaining the necessary conditions for effective ion implantation.

Career Highlights

Hisamune is associated with Nihon Shinku Gijutsu Kabushiki Kaisha, where he has been instrumental in developing innovative technologies. His expertise in ion implantation has positioned him as a key figure in the advancement of semiconductor processes.

Collaborations

Throughout his career, Takeshi Hisamune has collaborated with notable colleagues such as Seiji Ogata and Yuzo Sakurada. These collaborations have further enhanced the development of technologies in the field of ion implantation.

Conclusion

Takeshi Hisamune's contributions to ion implantation technology exemplify the impact of innovative thinking in the semiconductor industry. His patent for the ion implantation apparatus showcases his commitment to advancing technology and improving manufacturing processes.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…