Sendai, Japan

Takayuki Kawamata


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 50(Granted Patents)


Company Filing History:


Years Active: 2006-2008

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3 patents (USPTO):Explore Patents

Title: The Innovations of Takayuki Kawamata

Introduction

Takayuki Kawamata is a prominent inventor based in Sendai, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the efficiency and functionality of semiconductor devices.

Latest Patents

Kawamata's latest patents include advancements in semiconductor devices and manufacturing methods. One notable patent describes a semiconductor device that features a semiconductor substrate with a gate electrode formed via a gate insulating film. This device includes a source region and a drain region of a first conductivity type, strategically placed on either side of the gate electrode. Additionally, a punch-through stopper region of a second conductivity type is incorporated, positioned between the source and drain regions. The concentration of the impurity element in this region is set to be at least five times that of the substrate impurity concentration, enhancing the device's performance.

Career Highlights

Kawamata is currently employed at Fujitsu Corporation, where he continues to innovate in semiconductor technology. His expertise has led to the development of cutting-edge devices that are crucial for modern electronics.

Collaborations

Throughout his career, Kawamata has collaborated with notable colleagues, including Taketo Watanabe and Toshio Nomura. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Takayuki Kawamata's contributions to semiconductor technology exemplify the spirit of innovation. His patents reflect a deep understanding of the complexities involved in semiconductor design and manufacturing. His work continues to influence the industry and pave the way for future advancements.

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