Moriguchi, Japan

Takashi Ozone


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 49(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: Innovative Contributions of Inventor Takashi Ozone

In the world of semiconductor technology, Takashi Ozone stands out as a key inventor contributing to the advancement of field effect transistors. Based in Moriguchi, Japan, Ozone has made significant strides in the realm of innovative methods for fabricating these essential electronic components.

Latest Patents

Takashi Ozone holds a patent for a groundbreaking methodology titled "Method of making symmetrically controlled implanted regions using a method of fabricating a field effect transistor." This innovative technique allows for the formation of impurity diffusion layers of source and drain by utilizing an ion implantation method. By positioning the semiconductor substrate at an incline relative to the ion beam's direction and rotating it appropriately, this method effectively prevents the channeling effect. The result is the formation of impurity diffusion layers that are symmetrically aligned with respect to the gate electrode.

Career Highlights

Takashi Ozone is currently employed at Matsushita Electric Industrial Co., Ltd., a leading company in the electronics industry. His work involves the development of semiconductor technologies that are crucial for modern electronic devices. Through his innovative methodologies, he has played an important role in enhancing the performance and efficiency of transistors.

Collaborations

Throughout his career, Ozone has had the opportunity to collaborate with talented individuals such as Toshiki Yabu and Michihiro Inoue. These collaborations have undoubtedly contributed to the richness and depth of his research and innovations. Working alongside such esteemed colleagues, Ozone has been able to advance his work in semiconductor fabrication techniques.

Conclusion

Takashi Ozone's contributions to the field of semiconductor technology have made a lasting impact on the development of field effect transistors. With a patent that showcases an innovative approach to impurity diffusion layer formation, his work is a testament to the importance of creativity and collaboration in driving technological progress. As the electronics industry continues to evolve, inventors like Takashi Ozone will undoubtedly remain at the forefront of innovation.

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