Kodaira, Japan

Takao Oono


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 31(Granted Patents)


Location History:

  • Kodaira, JP (1990)
  • Tokyo, JP (1992)

Company Filing History:


Years Active: 1990-1992

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2 patents (USPTO):Explore Patents

Title: Takao Oono: Innovator in Semiconductor Memory Technology

Introduction

Takao Oono is a notable inventor based in Kodaira, Japan, recognized for his contributions to semiconductor memory technology. With a total of 2 patents, Oono has made significant advancements in the field, particularly in the design and functionality of static type semiconductor memories.

Latest Patents

Oono's latest patents focus on enhancing the efficiency of static type semiconductor memory. His innovations involve a multi-stage sense amplification process, where information read from a memory cell undergoes amplification through an initial stage sense amplifier, a post-stage sense amplifier, and a main amplifier. This information is then transmitted to an output buffer circuit. The design includes an equalizing circuit connected to the complementary inputs of each amplifier stage, allowing for high-speed inverse information read operations. Initially, the amplifiers operate under high gain conditions for rapid sense amplification, before transitioning to low power consumption modes to maintain the integrity of the read-out information.

Career Highlights

Throughout his career, Takao Oono has worked with prominent companies such as Hitachi, Ltd. and Hitachi VLSI Engineering Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Oono has collaborated with notable colleagues, including Shoji Hanamura and Masaaki Kubotera, further enhancing his work in the semiconductor field.

Conclusion

Takao Oono's contributions to semiconductor memory technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the development of efficient memory systems.

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