This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1996.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1996
Title: Takamitsu Yoshida: Innovator in Semiconductor Technology
Introduction
Takamitsu Yoshida is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to silicon oxide formation.
Latest Patents
Yoshida holds a patent for a "Method for forming silicon oxide on a semiconductor." This invention involves a plasma CVD device that includes a chamber, an upper electrode, and an under electrode designed to mount a sample. The device utilizes multiple power sources with different frequencies connected to the upper electrode. The process introduces gas into the chamber, which contains an organic silicon compound, CF₄, and O₂, with a specific element ratio of silicon to fluorine set to 15 or more. The organic silicon compounds used include Si(OC₂H₅)₄ or Si(OCH₃)₄.
Career Highlights
Yoshida is associated with Kabushiki Kaisha Tohsiba, where he has been instrumental in advancing semiconductor technologies. His work has been recognized for its impact on the efficiency and effectiveness of semiconductor manufacturing processes.
Collaborations
Some of his notable coworkers include Naruhiko Kaji and Riichirou Aoki, who have collaborated with him on various projects within the semiconductor field.
Conclusion
Takamitsu Yoshida's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the industry. His work continues to influence the development of efficient manufacturing processes in the semiconductor sector.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile