Hitachinaka, Japan

Takamitsu Matsuo



Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Takamitsu Matsuo: Innovator in Semiconductor Technology

Introduction

Takamitsu Matsuo is a notable inventor based in Hitachinaka, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Matsuo holds a patent for a semiconductor device and method for producing the same. This invention features a unique design where a gate electrode is disposed in a trench within an active region. An emitter electrode is strategically placed apart from the gate electrode, also within the trench. The design includes a source diffusion layer and a base diffusion layer, with the base diffusion layer having an inclined base bottom portion. This inclination allows for a portion of the base bottom adjacent to the emitter electrode to be deeper than that adjacent to the gate electrode. Additionally, a contact portion is designed with a contact bottom that is also inclined, ensuring that the part in contact with the emitter electrode is deeper than the part in contact with the base diffusion layer.

Career Highlights

Matsuo is currently associated with Renesas Electronics Corporation, where he continues to work on advancing semiconductor technologies. His expertise and innovative approach have positioned him as a key figure in his field.

Collaborations

Matsuo collaborates with talented individuals such as Hitoshi Matsuura and Yasuyuki Saito, contributing to a dynamic work environment that fosters innovation.

Conclusion

Takamitsu Matsuo's contributions to semiconductor technology through his patent demonstrate his commitment to innovation and excellence in his field. His work continues to influence the industry and inspire future advancements.

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