Company Filing History:
Years Active: 1993
Title: Takahiko Endo: Innovator in Heterojunction Bipolar Transistors
Introduction
Takahiko Endo is a prominent inventor based in Hino, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of heterojunction bipolar transistors (HBTs). His innovative work has led to advancements that enhance the performance of electronic devices.
Latest Patents
Takahiko Endo holds a patent for a heterojunction bipolar transistor. In this invention, the base layers and collector layers are divided into multiple layers. One of the base layers, positioned closer to the collector layer region, is set at a lower impurity concentration than the other base layer closer to the emitter layer. This design addresses the issue of thermal histories during epitaxial growth, which can disrupt impurity distribution due to diffusion, causing a shift in the heterojunction from a p-n junction. The invention allows minority carriers in the base to flow smoothly toward the collector, resulting in an HBT with a very high current gain and cut-off frequency. Additionally, the second HBT design features a base region with a first base layer of low concentration that matches the energy band gap of the emitter region, transitioning to a complete depletion layer in a thermally balanced state. This is complemented by a graded second base layer of high concentration, forming a heterojunction that achieves high-speed performance while maintaining the emitter-base voltage withstanding characteristic.
Career Highlights
Takahiko Endo is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has been instrumental in pushing the boundaries of semiconductor technology and enhancing the capabilities of electronic components.
Collaborations
Takahiko Endo has collaborated with Riichi Katoh, contributing to the advancement of their shared projects in semiconductor technology.
Conclusion
Takahiko Endo's innovative work in heterojunction bipolar transistors has made a significant impact on the field of electronics. His contributions continue to influence the development of high-performance semiconductor devices.