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For the Inventor, By the Inventor

Kanagawa, Japan

Taizo Ohashi

This inventor holds 3 USPTO granted patents. Top assignee: Tokyo Shibaura Electric Co., Ltd.. Active years: 1979-1982.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Taizo Ohashi. Retrieved from https://idiyas.com/inventor/taizo-ohashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 128(Granted Patents)


Location History:

  • Koza, JP (1979)
  • Kanagawa, JP (1980 - 1982)

Company Filing History:

goldMedal3 out of 681 
 
Tokyo Shibaura Electric Co., Ltd.
 patents

Years Active: 1979-1982

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3 patents (USPTO):Explore Patents
1. 4339340 - Surface-treating agent adapted for intermediate products of a (1982-07-13),
2. 4239661 - Surface-treating agent adapted for intermediate products of a (1980-12-16),
3. 4172005 - Method of etching a semiconductor substrate (1979-10-23),

Title: Taizo Ohashi: Innovator in Semiconductor Surface Treatment

Introduction

Taizo Ohashi is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the development of surface-treating agents. With a total of 3 patents to his name, his work has had a considerable impact on the efficiency and effectiveness of semiconductor production processes.

Latest Patents

Ohashi's latest patents focus on a surface-treating agent formed of an aqueous solution containing 0.01 to 20% by weight of trialkyl(hydroxyalkyl) ammonium hydroxide. This innovative treating agent is designed for the effective removal of organic and inorganic contaminants deposited on the surfaces of intermediate semiconductor products. It also facilitates the efficient etching of metal layers used as wiring in semiconductor devices. Furthermore, the agent can eliminate portions of a positive working photoresist film coated on the surfaces of intermediate semiconductor products, which are either exposed or not exposed to light, by controlling its concentration.

Career Highlights

Taizo Ohashi is currently associated with Tokyo Shibaura Electric Co., Ltd., where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in enhancing the manufacturing processes of semiconductor devices, contributing to the overall efficiency and reliability of these essential components.

Collaborations

Ohashi has collaborated with notable colleagues such as Hisashi Muraoka and Masafumi Asano. Their combined expertise has fostered innovation and progress in the field of semiconductor surface treatment.

Conclusion

In summary, Taizo Ohashi is a distinguished inventor whose work in semiconductor surface treatment has led to significant advancements in the industry. His innovative patents and collaborations continue to shape the future of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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