Jeonju-si, South Korea

Tae-Hyeon Kim


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: The Innovations of Tae-Hyeon Kim: Pioneering 3D Resistive Memory Technology

Introduction: Tae-Hyeon Kim is an accomplished inventor based in Jeonju-si, South Korea. He has made significant contributions to the field of memory devices, showcasing his innovative spirit through his patented technology. His work primarily focuses on enhancing memory efficiency, which is crucial for the future of computing.

Latest Patents: Tae-Hyeon Kim holds a patent for a “Resistive random access memory device for 3D stack and memory array using the same and fabrication method thereof.” This invention relates to a resistance change memory, specifically a resistive memory device. By employing a bottom electrode made from a doped semiconductor material, distinct from conventional methods, he enables the simultaneous fabrication of the memory device alongside peripheral circuit elements. This innovative design incorporates one or more electric field concentration regions in the bottom electrode, significantly reducing power consumption by lowering voltage requirements. Furthermore, this technology can be vertically stacked in compact formats, which makes it highly relevant for applications in synaptic device arrays, a promising area of research in next-generation computing aimed at mimicking neural systems.

Career Highlights: Tae-Hyeon Kim is affiliated with Seoul National University, where he continues to develop cutting-edge technology in the realm of memory devices. His role at this prestigious institution underscores his commitment to advancing research and innovation, and he plays a vital part in the academic community focused on memory technology.

Collaborations: In his work, Tae-Hyeon Kim collaborates with esteemed colleagues such as Byung-Gook Park and Sungjun Kim. Together, they are exploring new frontiers in resistance change memory technology, driving the field forward through collective creativity and expertise.

Conclusion: Tae-Hyeon Kim's pioneering work in the invention of advanced resistive memory devices highlights his significant contribution to the fields of electronics and computing. His innovations not only pave the way for more efficient memory solutions but also support the development of technologies that could revolutionize how we understand and implement computing systems in the future.

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