Sylvain L Delage

Title: Sylvain L Delage: Innovator in Silicon Molecular Beam Epitaxy

Introduction

Sylvain L Delage is a notable inventor based in Paris, France. He has made significant contributions to the field of semiconductor technology, particularly in the area of molecular beam epitaxy. His innovative work has led to the development of a unique boron source that enhances the efficiency of silicon processing.

Latest Patents

Delage holds a patent for a "Boron source for silicon molecular beam epitaxy." This invention presents a simple, effective, and fairly stable boron source that is easy to prepare and operate under ultra-high vacuum (UHV) processing conditions. The method involves the in situ alloying of boron into a high melting point elemental semiconductor material, preferably silicon, within the hearth of an electron beam evaporator. By melting silicon and dissolving boron into it, a supersaturated solution is created, which is then quenched. This process allows for the uncontaminated evaporation of silicon from the silicon-boron alloy source, facilitating the incorporation of boron as a dopant into growing layers such as Si, Ge, and Si-Ge alloys.

Career Highlights

Delage's career is marked by his work at the International Business Machines Corporation (IBM), where he has contributed to advancements in semiconductor technology. His innovative approach to boron sourcing has positioned him as a key figure in the field.

Collaborations

Delage has collaborated with notable colleagues, including Bruce A Ek and Subramanian Srikanteswara Iyer. Their combined expertise has furthered the development of technologies in semiconductor processing.

Conclusion

Sylvain L Delage's contributions to the field of molecular beam epitaxy and semiconductor technology are noteworthy. His innovative patent for a boron source exemplifies his commitment to advancing the industry. His work continues to influence the development of efficient semiconductor processes.