Company Filing History:
Years Active: 2002
Title: Innovator Spotlight: Sunil V Hanttangady
Introduction
Sunil V Hanttangady, an accomplished inventor based in McKinney, Texas, has made significant strides in the field of integrated circuits. With a focus on enhancing the integration of dielectrics with semiconductor layers, Hanttangady's innovative approach has implications for advanced memory cells and gate dielectrics.
Latest Patents
Hanttangady holds a patent for an invention titled "Integrated Dielectric and Method." This inventive concept addresses the critical integration challenges of dielectrics with integrated circuits, specifically focusing on the development of reaction barriers between high-k dielectrics and underlying Group IV semiconductor layers. The method outlined includes several key steps: it begins with providing a partially completed integrated circuit that possesses a semiconductor layer predominantly made of silicon. This layer features an exposed face, where an ultra-thin silicon carbide (SiC) reaction barrier is formed. Subsequently, a high permittivity storage dielectric is deposited atop this SiC layer, showcasing the potential advancements for high permittivity memory applications. Notably, the SiC reaction barrier is typically less than 25 Å thick, ideally composed of just one or two monolayers.
Career Highlights
Currently, Hanttangady is a valuable member of Texas Instruments Corporation, a leading firm in the field of semiconductor innovation. His work at the company reflects a commitment to driving advancements in technology that can enhance electronic devices through improved semiconductor integration.
Collaborations
Sunil collaborates with esteemed colleagues such as Robert M. Wallace and Bruce E. Gnade, whose expertise complements his innovation-focused endeavors. These partnerships foster a dynamic environment for research and development in integrated circuits and related technologies.
Conclusion
Sunil V Hanttangady exemplifies the spirit of innovation within the technology sector. His contributions, particularly through his patented work on integrated dielectrics, continue to pave the way for future advancements in semiconductor applications, underscoring the importance of collaboration in achieving technological breakthroughs.