Company Filing History:
Years Active: 2009
Title: Innovations of Sungjoo Lee in Semiconductor Technology
Introduction
Sungjoo Lee is a prominent inventor based in Singapore, known for his contributions to semiconductor technology. He has developed innovative methods that enhance the performance and fabrication processes of transistors. His work is particularly significant in the field of N-type Schottky barrier transistors.
Latest Patents
Sungjoo Lee holds a patent for a "Schottky barrier source/drain n-mosfet using ytterbium silicide." This patent presents a method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) utilizing ytterbium silicide (YbSi) for the source and drain. The fabrication process of YbSi is compatible with standard CMOS processes, eliminating the need for ultra-high vacuum conditions typically required for other materials. To prevent the oxidation of ytterbium during ex situ annealing and to enhance film quality, a suitable capping layer stack has been developed.
Career Highlights
Sungjoo Lee is affiliated with the National University of Singapore, where he conducts research and development in semiconductor technologies. His innovative approaches have garnered attention in the academic and industrial sectors, contributing to advancements in transistor fabrication.
Collaborations
Sungjoo Lee has collaborated with notable colleagues, including Shiyang Zhu and Jingde Chen, to further his research and development efforts in semiconductor technology.
Conclusion
Sungjoo Lee's contributions to the field of semiconductor technology, particularly through his patent on Schottky barrier transistors, highlight his innovative spirit and commitment to advancing electronic materials. His work continues to influence the development of more efficient and effective semiconductor devices.