Gyeonggi-do, South Korea

Sunggab Lee


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Sunggab Lee

Sunggab Lee is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of technology, particularly in the area of flash memory systems. His work has led to the development of innovative solutions that enhance data processing and storage efficiency.

Latest Patents

Sunggab Lee holds a patent for a "Hierarchical Flash Translation Layer Structure and Method for Designing the Same." This patent describes a Flash Translation Layer (FTL) structure that includes mapping information for storing data. The FTL structure comprises multiple hierarchical data groups, including a zeroth-layer host data group and first-layer to n-layer metadata groups. It also features zeroth to n-logs configured in a hierarchical structure corresponding to the respective data groups. This innovative design allows for efficient processing of data across various layers, utilizing both volatile and non-volatile memory resources.

Career Highlights

Throughout his career, Sunggab Lee has demonstrated a commitment to advancing technology through his inventive work. His patent reflects a deep understanding of data management and memory architecture, showcasing his expertise in the field. He is currently associated with Fadu Inc., where he continues to contribute to technological advancements.

Collaborations

Sunggab Lee collaborates with talented individuals such as Yoon Jae Seong and Eyee Hyun Nam. Their combined efforts in research and development have fostered an environment of innovation and creativity.

Conclusion

Sunggab Lee's contributions to the field of technology, particularly through his patent on hierarchical flash translation layers, highlight his role as a significant inventor. His work not only enhances data processing capabilities but also sets a foundation for future innovations in memory technology.

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