Location History:
- Sungnam, KR (1993)
- Kyungki-do, KR (1995)
Company Filing History:
Years Active: 1993-1995
Title: Innovations of Sung C Kim in Semiconductor Manufacturing
Introduction
Sung C Kim is a notable inventor based in Sungnam, South Korea. He has made significant contributions to the field of semiconductor manufacturing, holding 2 patents that showcase his innovative approaches.
Latest Patents
His latest patents include methods of patterning and manufacturing semiconductor devices, specifically focusing on hyperfine patterning techniques. The steps outlined in his patents involve coating a hemisphere particle layer with hills and valleys on a layer to be etched. This hemisphere particle layer possesses an etch selectivity that is higher than that of the first layer. The valleys of the hemisphere particle layer are filled with a second layer that also has a higher etch selectivity. The process includes etching back the hills of the hemisphere particle layer to expose the first layer, using the second layer as a mask. This innovative approach allows for hyperfine patterning of approximately 0.1 μm. The mean size and density of the hills and valleys can be controlled, enabling precise pattern size adjustments. When applied to capacitors of semiconductor memory elements, this method can increase the capacitor node surface area, depending on the etched back depth of a polysilicon layer.
Career Highlights
Sung C Kim is currently employed at Goldstar Electron Co., Ltd., where he continues to develop and refine his innovative techniques in semiconductor manufacturing. His work has been instrumental in advancing the capabilities of semiconductor devices.
Collaborations
He has collaborated with notable coworkers, including Young Kwon Jun and Sa K Ra, contributing to a dynamic and innovative work environment.
Conclusion
Sung C Kim's contributions to semiconductor manufacturing through his innovative patents highlight his expertise and commitment to advancing technology in this field. His work continues to influence the development of more efficient and effective semiconductor devices.