Sumiyoshi Ueyama

Title: Sumiyoshi Ueyama: Innovator in Single-Crystalline Thin Film Technology

Introduction

Sumiyoshi Ueyama is a prominent inventor based in Suita, Japan. He has made significant contributions to the field of materials science, particularly in the development of methods for forming single-crystalline thin films. With a total of 5 patents to his name, Ueyama's work has advanced the understanding and application of thin film technology.

Latest Patents

Ueyama's latest patents include an "Apparatus for forming single-crystalline thin film by beam irradiator" and a "Method of forming single-crystalline thin film using beam irradiating." Both patents describe a process that utilizes a downwardly directed mainly neutral Ne atom current generated by an ECR ion generator. This innovative approach allows for the growth of an amorphous Si thin film on an SiO.sub.2 substrate through plasma CVD reactions. The method ensures that the Ne atom current is directed perpendicularly to the densest planes of single-crystalline Si, facilitating the conversion of the amorphous film into a single-crystalline thin film with precisely regulated crystal axes.

Career Highlights

Throughout his career, Ueyama has worked with notable companies such as Megachips Corporation and Neural Systems Corporation. His expertise in thin film technology has positioned him as a key figure in the industry, contributing to advancements that have practical applications in various fields.

Collaborations

Ueyama has collaborated with esteemed colleagues, including Toshifumi Asakawa and Masahiro Shindo. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Sumiyoshi Ueyama's contributions to the field of single-crystalline thin film technology highlight his role as a leading inventor. His innovative methods and collaborative efforts continue to influence advancements in materials science.