Newark, DE, United States of America

Steven R Nann


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: Steven R. Nann: Innovator in Multilayer Circuit Fabrication

Introduction

Steven R. Nann is a notable inventor based in Newark, DE (US). He has made significant contributions to the field of circuit fabrication, particularly through his innovative methods for creating multilayer circuits. His work has implications for various electronic applications, enhancing the efficiency and functionality of circuit designs.

Latest Patents

Steven R. Nann holds a patent for a "Method for Fabricating Multilayer Circuits." This patent describes a process that involves patterned conductive layers separated by dielectric layers, which are connected by vias in the dielectric. The method allows for the unfired dielectric layers to be laminated as tapes or sheets over either a fired or unfired conductor layer while under a vacuum. This innovation is crucial for advancing multilayer circuit technology.

Career Highlights

Nann is currently employed at E.I. du Pont de Nemours and Company, a leading organization in the field of materials science and engineering. His role at the company allows him to apply his expertise in circuit fabrication and contribute to the development of advanced electronic materials.

Collaborations

One of his notable coworkers is John Edwin Gantzhorn, Jr. Together, they work on projects that push the boundaries of circuit technology and innovation.

Conclusion

Steven R. Nann's contributions to the field of multilayer circuit fabrication exemplify the importance of innovation in technology. His patent and work at E.I. du Pont de Nemours and Company highlight his role as a key figure in advancing electronic circuit design.

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