Stephan P Kudelka

Title: Innovations by Stephan P Kudelka

Introduction

Stephan P Kudelka is a notable inventor based in Fishkill, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of deep trench silicon etching. His innovative methods have implications for the development of dynamic random-access memory (DRAM) devices.

Latest Patents

Kudelka holds a patent for a method of reducing reactive ion etching (RIE) lag during the construction of deep trenches in silicon. This patent, titled "Method of reducing RIE lag for deep trench silicon etching," describes a technique that minimizes RIE lag by forming a passivation film. This film prevents isotropic etching of the substrate, thereby maintaining the required profile and shape of the deep trench. The RIE process allows for a partial trench to be etched into the substrate, achieving a predetermined depth while controlling the thickness of the passivation film.

Career Highlights

Stephan P Kudelka is associated with the International Business Machines Corporation (IBM), where he has applied his expertise in semiconductor fabrication. His work has contributed to advancements in high aspect ratio structures, which are critical for modern electronic devices.

Collaborations

Kudelka has collaborated with notable colleagues, including Munir D Naeem and Gangadhara Swami Mathad. These collaborations have fostered innovation and development in their respective fields.

Conclusion

Stephan P Kudelka's contributions to semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor in the industry. His work continues to impact the development of advanced electronic components.