Company Filing History:
Years Active: 2019
Title: Innovations by Sriharsha V Aradhya
Introduction
Sriharsha V Aradhya is an accomplished inventor based in Fremont, CA. He has made significant contributions to the field of magnetic tunnel junction circuits, particularly through his innovative patent that focuses on low-error switching mechanisms.
Latest Patents
Sriharsha V Aradhya holds a patent titled "Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect." This technology provides various implementations of a device based on the spin Hall effect (SHE) and spin transfer torque (STT) effect. The device includes a magnetic structure with a ferromagnetic layer that can change its magnetization direction via spin transfer torque. It also features a SHE layer that generates a spin-polarized current in response to an applied charge current. The design allows for low write error rates with pulse durations of around 2 ns or shorter, enabling efficient switching of the magnetization direction.
Career Highlights
Sriharsha V Aradhya is affiliated with Cornell University, where he continues to advance research in magnetic technologies. His work has garnered attention for its potential applications in data storage and processing technologies.
Collaborations
He has collaborated with notable colleagues, including Robert A Buhrman and Daniel C Ralph, who have contributed to the research and development of his innovative technologies.
Conclusion
Sriharsha V Aradhya's contributions to the field of magnetic tunnel junction circuits exemplify the impact of innovative thinking in technology. His patent reflects a significant advancement in the efficiency of magnetic devices, showcasing the potential for future developments in this area.