Company Filing History:
Years Active: 2022
Title: Songyuan Dai: Innovator in Perovskite Quantum Dot Technology
Introduction
Songyuan Dai is a prominent inventor based in Beijing, China. He has made significant contributions to the field of perovskite quantum dot material technology. His innovative approach has led to the development of a unique method for preparing perovskite quantum dot films.
Latest Patents
Songyuan Dai holds a patent titled "Method for preparing CsPbX3 perovskite quantum dot film by one-step crystallization." This patent describes a method that utilizes adamantanemethylamine and hydrohalic acid as ligands. The process involves mixing cesium halide, lead halide, and the ligands with a solvent to create a precursor solution. This solution is then deposited on a substrate and heated to produce a high-quality CsPbX3 perovskite quantum dot film. The method is noted for its simplicity and cost-effectiveness, allowing for the direct formation of a film with a thickness exceeding 500 nm.
Career Highlights
Songyuan Dai is affiliated with North China Electric Power University, where he continues to advance research in quantum dot technology. His work has garnered attention for its potential applications in various fields, including optoelectronics and renewable energy.
Collaborations
He has collaborated with notable colleagues such as Yong Ding and Cheng Liu, contributing to the advancement of research in their shared field of expertise.
Conclusion
Songyuan Dai's innovative methods in preparing perovskite quantum dot films represent a significant advancement in material technology. His contributions are paving the way for future developments in the field.