So Ik Bae

Title: So Ik Bae: Innovator in Silicon Wafer Technology

Introduction

So Ik Bae is a notable inventor based in Daejeon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the area of silicon wafer processing. His innovative methods aim to enhance the quality and performance of silicon wafers used in various electronic applications.

Latest Patents

So Ik Bae holds a patent for a method of eliminating boron contamination in annealed wafers. This method prevents the increase of boron concentration near the surface of silicon wafers. It ensures that there is no difference in boron concentration between the surface of the annealed wafer and the silicon bulk. The process effectively eliminates boron contamination caused by annealing treatments. The method involves a temperature heat-up in a mixed gas atmosphere, which includes a specific ratio of hydrogen gas to inert gas, to remove the boron-containing native oxide film. This is followed by annealing in an inert gas atmosphere.

Career Highlights

So Ik Bae is currently associated with Sumco Corporation, a leading company in the semiconductor industry. His work focuses on improving the manufacturing processes of silicon wafers, which are critical components in electronic devices. His innovative approach has contributed to advancements in wafer technology.

Collaborations

So Ik Bae has collaborated with Yoshinobu Nakada, a fellow innovator in the field. Their partnership has fostered the development of new techniques and methods that enhance the efficiency and quality of silicon wafer production.

Conclusion

So Ik Bae's contributions to silicon wafer technology demonstrate his commitment to innovation in the semiconductor industry. His patented methods are paving the way for improved manufacturing processes and higher quality electronic components.