Company Filing History:
Years Active: 2025
Title: Si Young Bae: Innovator in Gallium Oxide Crystal Growth
Introduction
Si Young Bae is a notable inventor based in Jinju-si, South Korea. He has made significant contributions to the field of materials science, particularly in the development of gallium oxide single crystals. His innovative work has led to advancements in various applications, including electronics and optoelectronics.
Latest Patents
Si Young Bae holds a patent for a "Powder for growing gallium oxide single crystal and method of manufacturing the same." This invention relates to a specialized powder made of gallium oxide, which has a bulk density of 0.7 g/cm³ or more and 1.0 g/cm³ or less. This patent is crucial for enhancing the quality and efficiency of gallium oxide crystal growth.
Career Highlights
Bae is affiliated with the Korea Institute of Ceramic Engineering and Technology, where he conducts research and development in advanced materials. His work has been instrumental in pushing the boundaries of ceramic engineering and technology.
Collaborations
Si Young Bae collaborates with talented colleagues, including Seong Min Jeong and Yun Ji Shin. Their combined expertise fosters a productive research environment that drives innovation in their field.
Conclusion
Si Young Bae's contributions to gallium oxide crystal growth exemplify the importance of innovation in materials science. His patent and ongoing research continue to influence advancements in technology and engineering.