Apple Valley, MN, United States of America

Shuiyuan Haung


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Innovations by Shuiyuan Haung in Magnetic Element Fabrication

Introduction

Shuiyuan Haung is an accomplished inventor based in Apple Valley, MN (US). He has made significant contributions to the field of magnetic element fabrication. His innovative approach has led to the development of a unique method that addresses substrate stress in magnetic stack designs.

Latest Patents

Shuiyuan Haung holds 1 patent for his invention titled "Method of fabricating a magnetic stack design with decreased substrate stress." This patent describes a magnetic element and a method for creating it. The method involves patterning a first electrode material to form a first electrode on a substrate. It also includes depositing filler material around the first electrode and polishing to create a planar surface. A magnetic cell is then formed on this surface, followed by the formation of a second electrode on the magnetic cell. Notably, the first electrode has an area that is at least 2:1 compared to the area of the magnetic cell.

Career Highlights

Shuiyuan Haung is currently employed at Seagate Technology Incorporated, where he continues to innovate in the field of magnetic technologies. His work has been instrumental in advancing the capabilities of magnetic elements used in various applications.

Collaborations

Throughout his career, Shuiyuan has collaborated with talented individuals such as Yongchul Ahn and Antoine Khoueir. These collaborations have further enriched his work and contributed to the success of his projects.

Conclusion

Shuiyuan Haung's contributions to the field of magnetic element fabrication demonstrate his innovative spirit and dedication to advancing technology. His patent reflects a significant step forward in reducing substrate stress, showcasing his expertise and commitment to excellence.

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