Otsu, Japan

Shuichi Nishida


Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 23(Granted Patents)


Company Filing History:


Years Active: 1992-1993

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2 patents (USPTO):Explore Patents

Title: The Innovations of Shuichi Nishida

Introduction

Shuichi Nishida is a prominent inventor based in Otsu, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents to his name, Nishida's work focuses on improving the efficiency and functionality of semiconductor devices.

Latest Patents

Nishida's latest patents include a manufacturing method for contact hole arrangements in semiconductors. This innovation involves a semiconductor device that features first and second oxide film regions on a semiconductor substrate. The design includes a first impurity diffusion region positioned away from one of the oxide regions and a second impurity diffusion region that partially overlaps the first. The contact hole extends over the second impurity diffusion region, with specific dimensions that enhance the device's performance. Another patent addresses reducing contact resistance between diffusion regions in semiconductor devices, utilizing similar structural elements to optimize functionality.

Career Highlights

Shuichi Nishida is associated with Matsushita Electronics Corporation, a leading company in the electronics industry. His work has been instrumental in advancing semiconductor technology, contributing to the development of more efficient devices.

Collaborations

Nishida has collaborated with Takashi Furuta, a fellow innovator in the field. Their partnership has led to advancements in semiconductor manufacturing techniques.

Conclusion

Shuichi Nishida's contributions to semiconductor technology through his patents and collaborations highlight his role as a key inventor in the industry. His work continues to influence the development of efficient electronic devices.

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