Tbilisi, Russia

Shota Shalvovich Shavelashvili


Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 17(Granted Patents)


Location History:

  • Tbilisi, RU (1997)
  • Vazha Pshavela, GE (1998)

Company Filing History:


Years Active: 1997-1998

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2 patents (USPTO):Explore Patents

Title: Shota Shalvovich Shavelashvili: Innovator in N-Type Semiconducting Diamond Technology

Introduction

Shota Shalvovich Shavelashvili is a prominent inventor based in Tbilisi, Russia. He has made significant contributions to the field of semiconductor technology, particularly in the development of n-type semiconducting diamonds. With a total of 2 patents to his name, Shota is recognized for his innovative approaches and methodologies.

Latest Patents

Shota's latest patents include a groundbreaking method for producing n-type semiconducting diamond. This method involves doping the diamond with boron-10 during its formation and bombarding it with neutrons. This process facilitates the in-situ conversion of boron-10 to lithium-7 while effectively filtering out high-energy neutron components during irradiation. This innovative technique has the potential to enhance the performance and applicability of semiconducting diamonds in various technological fields.

Career Highlights

Shota Shalvovich Shavelashvili is currently associated with Eneco, Inc., where he continues to push the boundaries of semiconductor research. His work has garnered attention for its potential applications in electronics and materials science. His dedication to advancing technology is evident in his research and development efforts.

Collaborations

Shota has collaborated with notable colleagues, including Yan R Kucherov and G S Karumidze. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Shota Shalvovich Shavelashvili stands out as an influential inventor in the realm of n-type semiconducting diamonds. His innovative methods and collaborative efforts continue to shape the future of semiconductor technology.

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